BC847CLT1G 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi BC847CLT1G
- Transistor Type: NPN
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 225mW
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 420@2mA,5V
- Collector Cut-Off Current (Icbo): 15nA
- Collector-Emitter Breakdown Voltage (Vceo): 45V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@100mA,5mA
- Package: SOT-23(TO-236)
- Manufacturer: onsemi